STB70NF03L-1 Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

STB70NF03L STP70NF03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 15 V
I_D = 35 A
22
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 5 V
165
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 15V I_D= 70A V_GS= 5V
22.5
30
nC
9
nC
12
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 15 V
I_D = 35 A
R_G = 4.7Ω,
V_GS = 5 V
(Resistive Load, Figure 3)
Min.
Typ.
21
25
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 70 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 70 A
di/dt = 100A/µs
V_DD = 20 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
42
52
2.5
Max.
70
280
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/11