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STB70NF03L-1 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/I2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
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STB70NF03L STP70NF03L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.5
Rthj-amb Thermal Resistance Junction-ambient
Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
30
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 18 V
±100
nA
ON (*)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS
ID = 250 µA
VGS = 10 V
VGS = 5 V
ID = 35 A
ID = 18 A
Min.
1
Typ. Max.
0.0075 0.0095
0.0135 0.018
Unit
V
Ω
Ω
DYNAMIC
Symbol
gfs (*)
Ciss
Coss
Crss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS = 15 V
ID = 35 A
VDS = 25V f = 1 MHz VGS = 0
Min.
Typ.
25
1440
560
135
Max.
Unit
S
pF
pF
pF
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