STB60NH02L Datasheet, PDF (3/11 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0085 ohm - 60A D²PAK STripFET™ III POWER MOSFET

STB60NH02L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 10 V
I_D = 30 A
10
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
130
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD= 10 V I_D= 60 A V_GS= 10 V
24
32
nC
5
nC
3.4
nC
Q_oss(5) Output Charge
V_DS= 16 V
V_GS= 0 V
9.4
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 10 V
I_D = 30 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
27
16
Max.
21.6
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max.
I_SD
Source-drain Current
60
I_SDM
Source-drain Current (pulsed)
240
V_SD ⁽⁴⁾ Forward On Voltage
I_SD = 30 A
V_GS = 0
1.3
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(1) _{Garanted when external Rg=4.7 Ω and tf < tfmax.}
(2) _{Pulse width limited by safe operating area}
(³) Starting T_j = 25 ^oC, I_D = 25A, V_DD = 15V
.
.
I_SD = 60 A
di/dt = 100A/µs
V_DD = 18 V
T_j = 150°C
(see test circuit, Figure 5)
36
48
36
48
2
(4) _{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(5) _{Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A}
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/11