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| STB60NH02L Datasheet, PDF (1/11 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0085 ohm - 60A D²PAK STripFET™ III POWER MOSFET | |||
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STB60NH02L
N-CHANNEL 24V - 0.0085 ⦠- 60A D²PAK
STripFET⢠III POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NH02L
24 V < 0.0105 ⦠60 A
s TYPICAL RDS(on) = 0.0085 ⦠@ 10 V
s TYPICAL RDS(on) = 0.012 ⦠@ 5 V
s RDS(ON) * Qg INDUSTRYâs BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX âT4â)
DESCRIPTION
The STB60NH02L utilizes the latest advanced design
rules of STâs proprietary STripFET⢠technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
1
D2PAK
TO-263
(Suffix âT4â)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB60NH02LT4
MARKING
B60NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vspike(1) Drain-source Voltage Rating
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(2)
Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
EAS (3) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
September 2003
PACKAGE
TO-263
Value
30
24
24
± 20
60
43
240
70
0.47
280
-55 to 175
PACKAGING
TAPE & REEL
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1/11
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