STB60NF06 Datasheet, PDF (3/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET™ POWER MOSFET

STB60NF06
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
t_d(on)
t_r
Turn-on Delay Time
Rise Time
V_DD = 30 V, I_D = 30 A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
Q_g
Total Gate Charge
V_DD = 48V, I_D =60A,V_GS = 10V
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Min.
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off-Delay Time
Fall Time
t_d(off)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 30 V, I_D = 30 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
Vclamp =48V, I_D = 60 A
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
Min.
Typ.
16
108
49
18
14
Typ.
43
20
40
12
21
Max.
66
Max.
Unit
ns
ns
nC
nC
nC
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (1) Source-drain Current (pulsed)
V_SD (2) Forward On Voltage
I_SD = 60 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 60 A, di/dt = 100A/µs,
V_DD = 25V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min. Typ. Max. Unit
60
A
240
A
1.3
V
73
ns
182
nC
5
A
Safe Operating Area
Thermal Impedence
3/9