STB60NF06 Datasheet, PDF (1/9 Pages) STMicroelectronics – N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET™ POWER MOSFET

STB60NF06
N-CHANNEL 60V - 0.014Ω - 60A D2PAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB60NF06
60V < 0.016 Ω 60A
s TYPICAL R_DS(on) = 0.014Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
D2PAK
DESCRIPTION
This Power Mosfet series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements.
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
s AUTOMOTIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM (q) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(q) Pulse width limited by safe operating area
February 2001
Value
60
60
± 20
60
42
240
110
0.73
4
–65 to 175
175
(1) I_SD≤ 60A, di/dt≤400 A/µs, V_DD≤ 24V, Tj≤T_jMAX
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
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