STB60NE03L-12 Datasheet, PDF (3/5 Pages) STMicroelectronics – N - CHANNEL 30V - 0.009 OHM - 60A - D2PAK SINGLE FEATURE SIZE POWER MOSFET

STB60NE3L1-16
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 15 V
RG =4.7 Ω
ID = 30 A
VGS = 5 V
Qg
Total Gate Charge
VDD = 24 V ID = 60 A VGS = 5 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Min.
Typ.
40
260
Max.
50
320
Unit
ns
ns
35
45
nC
18
nC
13
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V ID = 60 A
RG =4.7 Ω VGS = 5 V
Min.
Typ.
35
120
175
Max.
50
160
230
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 60 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 60 A
VDD = 24 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
Max.
60
240
Unit
A
A
1.5
V
55
ns
0.1
µC
3.5
Α
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