STB60NE03L-12 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 30V - 0.009 OHM - 60A - D2PAK SINGLE FEATURE SIZE POWER MOSFET

®
STB60NE03L-12
N - CHANNEL 30V - 0.009 Ω - 60A - D²PAK
"SINGLE FEATURE SIZE™ " POWER MOSFET
TYPE
VDSS
RDS(on)
ID
STB60NE03L-12 30 V <0.012 Ω
60 A
s TYPICAL RDS(on) = 0.009 Ω
s AVALANCE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW GATE CHARGE
s HIGH CURRENT CAPABILITY
s 175^oC OPERATING TEMPERATURE
s APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™ " strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s DC-DC & DC-AC CONVERTER
s AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Unit
30
V
30
V
± 20
V
60
A
42
A
240
A
100
0.67
W
W/^oC
7
V/ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 60 A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
1/5