STB5NB80 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET

STB5NB80
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t_d(on)
t_r
Pa ram et e r
Turn-on delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
V_DD = 400 V I_D = 3 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 480 V I_D = 5.6 A V_GS = 10 V
Min.
T yp.
18
9
30
9
14
Max.
42
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 640 V I_D = 5.6 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
T yp.
14
14
21
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 5 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 5.6 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
5
20
Unit
A
A
1.6
V
700
ns
5
µC
14
A
Safe Operating Area
Thermal Impedance
3/8