STB5NB80 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET

®
STB5NB80
N - CHANNEL 800V - 1.8Ω - 5A - D²PAK
PowerMESH™ MOSFET
TYPE
ST B5N B80
V_DSS
R_DS(on)
I_D
800 V < 2.2 Ω
5A
s TYPICAL R_DS(on) = 1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s DC-AC CONVERTERS FOR WELDING
s EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V _DGR
V_GS
I_D
ID
I_DM(•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gat e Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (cont inuous) at T_c = 25 ^o C
Drain Current (cont inuous) at Tc = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_{s tg} Storage T emperature
T_j
Max. Operating Junction T emperature
(*) Limited only by maximum temperature allowed
March 1999
3
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
Value
Unit
800
V
800
V
± 30
V
5
A
3.2
A
20
A
110
0.88
W
W /^o C
4
V/ns
-65 to 150
o_C
150
o_C
( 1) ISD ≤ 5A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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