STB4NC50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh™II MOSFET

STB4NC50
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
Turn-on Delay Time
t_r
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 300V, I_D = 2 A
R_G = 4.7Ω V_GS = 10V
(see test circuit, Figure 3)
V_DD = 400V, I_D = 4.2A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_r(Voff)
Off-voltage Rise Time
t_f
Fall Time
t_c
Cross-over Time
Test Conditions
V_DD = 400V, I_D = 4 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
Min. Typ. Max. Unit
10
ns
13
ns
12.5
17
nC
2.7
nC
6.1
nC
Min.
Typ.
15
13
20
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 4 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 4 A, di/dt = 100A/µs, V_DD
= 100V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
400
1.64
8.2
Max.
4
16
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area
Thermal Impedance
3/8