STB4NC50 Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh™II MOSFET

STB4NC50
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
1.56
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Rthc-sink Thermal Resistance Case-sink Typ
0.5
T_l
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max Value
10
110
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V_(BR)DSS
Drain-source
Breakdown Voltage
I_D = 250 µA, V_GS = 0
500
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
50
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ±30V
±100
°C/W
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
nA
ON (1)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
I_D(on)
On State Drain Current
Test Conditions
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 1.5 A
V_DS > I_D(on) x R_DS(on)max,
V_GS = 10V
Min.
2
Typ.
3
2.2
Max.
4
2.7
Unit
V
Ω
4
A
DYNAMIC
Symbol
Parameter
g_fs (1) Forward Transconductance
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max,
I_D = 2A
Min.
V_DS = 25V, f = 1 MHz, V_GS = 0
Typ.
3
315
52
7.7
Max.
Unit
S
pF
pF
pF
2/8