STB45N10L Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STB45N10L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
(di/dt)on
Qg
Qgs
Qgd
Parameter
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 50 V
RG = 4.7 Ω
ID = 22.5 A
VGS = 5 V
VDD = 80 V
RG = 47 Ω
VDD = 80 V
ID = 45 A
ID = 45 A
VGS = 5 V
VGS = 5 V
Min.
Typ.
25
100
130
70
15
35
Max.
35
140
100
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 80 V
RG = 4.7 Ω
ID = 45 A
VGS = 5 V
Min.
Typ.
40
90
130
Max.
60
130
190
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 45 A
VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
ISD = 45 A
VR = 30 V
Charge
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
165
0.1
12
Max.
45
180
1.5
Unit
A
A
V
ns
µC
A
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