STB45N10L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STB45N10L
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STB45N10L
VDSS
100 V
RDS(on)
< 0.036 Ω
ID
45 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.028 Ω
s AVALANCHE RUGGED TECHNOLOGY
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100^oC
s LOW INPUT CAPACITANCE
s LOW GATE CHARGE
s LOW LEAKAGE CURRENT
s APPLICATION ORIENTED
CHARACTERIZATION
s THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGE IN TUBE (SUFFIX "-1")
s SURFACE-MOUNTING D2PACK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX)
OR IN TAPE & REEL (SUFFIX "T4")
123
I2PAK
TO-262
3
1
D2PAK
TO-263
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VDGR
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
VGS Gate-source Voltage
ID
Drain Current (continuous) at Tc = 25 ^oC
ID
Drain Current (continuous) at Tc = 100 ^oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
March 1996
Value
100
100
± 15
45
32
180
150
1
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/^oC
o_C
o_C
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