STB40NS15 Datasheet, PDF (3/7 Pages) STMicroelectronics – N-CHANNEL 150V - 0.042ohm - 40A D2PAK MESH OVERLAY™ MOSFET

ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DD = 75V, I_D = 20A
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
V_DD = 120V, I_D = 40A,
V_GS = 10V
SWITCHING OFF
Symbol
Parameter
t_d(off)
Turn-off Delay Time
T_f
Fall Time
t_r(Voff)
t_f
t_c
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 75V, I_D = 20A
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 3)
V_clamp = 120V, I_D = 20 A,
R_G = 4.7Ω, V_GS = 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDM (2) Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 40A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 40A, di/dt = 100A/µs,
V_DD = 50V, T_j = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STB40NS15
Min. Typ. Max. Unit
25
ns
45
ns
100
110
nC
17
nC
47
nC
Min.
Typ.
85
Max.
Unit
ns
47
ns
35
ns
70
ns
Min. Typ. Max. Unit
40
A
160
A
1.5
V
270
ns
200
nC
1.5
A
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