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| STB40NS15 Datasheet, PDF (1/7 Pages) STMicroelectronics – N-CHANNEL 150V - 0.042ohm - 40A D2PAK MESH OVERLAY™ MOSFET | |||
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STB40NS15
N-CHANNEL 150V - 0.042⦠- 40A D2PAK
MESH OVERLAY⢠MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STB40NS15
150 V <0.052â¦
40A
s TYPICAL RDS(on) = 0.042â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s VERY LOW INTRINSIC CAPACITANCES
3
s GATE CHARGE MINIMIZED
1
DESCRIPTION
This powermos MOSFET is designed using the
companyâs consolidated strip layout-based MESH
OVERLAY⢠process. This technology matches
and improves the performances compared with
standard parts from various sources.
D2PAK
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s PRIMARYSWITCH IN ISOLATED DC-DC
CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (q) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt
Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(â¢)Pulse width limited by safe operating area
Value
150
150
±20
40
25
160
140
0.933
9
â65 to 175
175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
December 2001
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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