STB40NF10 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET

STB40NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 20 A
R_G = 4.7 Ω
V_GS = 10 V
(Resistive Load, see fig. 3)
V_DD = 80 V I_D = 40 A V_GS = 10 V
Min.
Typ.
28
63
Max.
Unit
ns
ns
60
80
nC
10
nC
23
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
t_d(off)
t_f
t_c
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 50 V
I_D = 20 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
Vclamp = 80 V
I_D = 40 A
R_G = 4.7 Ω
V_GS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
84
28
71
36
70
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 40 A V_GS = 0
t_rr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
I_SD = 40 A
V_DD = 50 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
114
456
8
Max.
40
160
1.5
Unit
A
A
V
ns
nC
A
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