STB40NF10 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 100V - 0.030W - 40ohm TO-263 LOW GATE CHARGE STripFET POWER MOSFET

®
STB40NF10
N - CHANNEL 100V - 0.030Ω - 40A TO-263
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS(on )}
I_D
STB40NF10
100 V < 0.035 Ω
40 A
s TYPICAL RDS(on) = 0.030 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D2PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency, high-frequen-
cy isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
100
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
100
VG S
I_D
I_D
I _DM ( •)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
± 20
40
25
160
140
Derating Factor
0.93
EAS (1) Single Pulse Avalanche Energy
135
T_stg Storage Temperature
-65 to 175
T_j Max. Operating Junction Temperature
175
(•) Pulse width limited by safe operating area
( 1) starting Tj = 25 ^oC, ID =40A , VDD = 50V
May 2000
Unit
V
V
V
A
A
A
W
W /^o C
mJ
o_C
o_C
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