STB3NC60 Datasheet, PDF (3/9 Pages) STMicroelectronics – N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

STB3NC60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Sy mbo l
t_d(on)
tr
Parameter
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Test Conditions
V_DD = 300 V I_D = 1. 5 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 480 V I_D = 3 A V_GS = 10 V
SWITCHING OFF
Sy mbo l
tr(Vo f f )
t_f
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID = 3 A
RG = 4.7 Ω VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Sy mbo l
Parameter
Test Conditions
ISD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls e d)
V_SD (∗) Forward O n Voltage
I_SD = 3 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
ISD = 3 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 5)
IRRM Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ .
9
13
Max.
Un it
ns
ns
13 18.2 nC
2.3
nC
4.4
nC
Min.
Typ .
13
15
21
Max.
Un it
ns
ns
ns
Min.
Typ .
Max.
3
12
Un it
A
A
1.6
V
420
ns
1.5
µC
7.1
A
Safe Operating Area for D²PAK/I²PAK
Thermal Impedancefor D²PAK/I²PAK
3/9