STB3NC60 Datasheet, PDF (1/9 Pages) STMicroelectronics – N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET

®
STB3NC60
N - CHANNEL 600V - 3.3Ω - 3A - D²PAK/I²PAK
PowerMESH™ ΙΙ MOSFET
TYPE
STB3NC60
VDSS
R DS ( o n )
ID
600 V < 3.6 Ω
3A
ν TYPICAL R_DS(on) = 3.3 Ω
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν VERY LOW INTRINSIC CAPACITANCES
ν GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™ II is the evolution of the first
generation of MESH OVERLAY™ . The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITCH MODE POWER SUPPLIES (SMPS)
ν DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
123
I²PAK
TO-262
(Suffix ”-1”)
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
P ara met er
V_DS Drain-source Voltage (V_GS = 0)
V_DGR Drain- gate Volt age (R_GS = 20 kΩ)
VGS G ate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
IDM(•) Drain Current (pulsed)
Ptot T otal Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
Value
600
600
± 30
3
1 .9
12
80
0. 64
4
-65 to 150
150
(1) ISD ≤3A, di/dt ≤ 100 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Unit
V
V
V
A
A
A
W
W/^oC
V/ns
o_C
o_C
February 2000
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