STB33N65M2 Datasheet, PDF (3/23 Pages) STMicroelectronics – Extremely low gate charge

STB33N65M2, STF33N65M2, STP33N65M2, STI33N65M2
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
D²PAK, TO-220,
I²PAK
TO-220FP
Unit
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
V_ISO
dv/dt ⁽³⁾
dv/dt⁽⁴⁾
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s; T_C=25 °C)
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
T_stg
Storage temperature
T_j
Max. operating junction temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. I_SD ≤ 24 A, di/dt ≤ 400 A/µs; V_{DS peak} < V_(BR)DSS, V_DD=400 V
4. V_DS ≤ 520 V
± 25
V
24
24⁽¹⁾
A
15
15⁽¹⁾
A
96
A
190
34
W
2500
V
15
50
- 55 to 150
150
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
D²PAK TO-220FP TO-220 I²PAK
R_thj-case
R_thj-pcb(1)
R_thj-amb
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Thermal resistance junction-ambient
max
0.66
30
3.68
0.66
62.5
°C/W
°C/W
°C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
I_AR
Avalanche current, repetitive or not
repetitive (pulse width limited by T_jmax)
2.5
A
E_AS
Single pulse avalanche energy
(starting T_j=25°C, I_D= I_AR; V_DD=50 V)
780
mJ
DocID027286 Rev 1
3/23
23