STB33N65M2 Datasheet, PDF (1/23 Pages) STMicroelectronics – Extremely low gate charge

STB33N65M2, STF33N65M2,
STP33N65M2, STI33N65M2
N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2
Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages
Datasheet - production data
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Features
Order codes
STB33N65M2
STF33N65M2
STP33N65M2
STI33N65M2
V_DS
R_DS(on)
max
I_D
650 V 0.14 Ω 24 A
• Extremely low gate charge
• Excellent output capacitance (C_oss) profile
• 100% avalanche tested
• Zener-protected
Figure 1. Internal schematic diagram
, TAB
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, the devices exhibit low on-resistance
and optimized switching characteristics, rendering
them suitable for the most demanding high
efficiency converters.
AM15572v1
Order codes
STB33N65M2
STF33N65M2
STP33N65M2
STI33N65M2
Table 1. Device summary
Marking
Package
D²PAK
33N65M2
TO-220FP
TO-220
I²PAK
Packaging
Tape and reel
Tube
December 2014
This is information on a product in full production.
DocID027286 Rev 1
1/23
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