STB3015L Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

STB3015L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 15 V
RG = 4.7 Ω
ID = 20 A
VGS = 5 V
Min.
Typ.
25
160
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 24 V ID = 40 A VGS = 5 V
40
nC
SWITCHING OFF
Symbol
tr(Voff)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
VDD = 24 V
RG = 4.7 Ω
ID = 40 A
VGS = 5 V
Min.
Typ.
25
120
155
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 40 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 40 A
VDD = 20 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 ^oC
Min.
Typ.
Max.
40
160
Unit
A
A
1.3
V
50
ns
0.9
nC
3.5
A
3/5