STB3015L Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.013 ohm - 40A - D2PAK/TO-220 STripFETO POWER MOSFET

STB3015L
®
STP3015L
N - CHANNEL 30V - 0.013 Ω - 40A - D²PAK/TO-220
STripFET™ POWER MOSFET
TYPE
STB3015L
VDSS
30 V
RDS(on)
< 0.0155 Ω
s TYPICAL RDS(on) = 0.013 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s LOW GATE CHARGE A 100^oC
s APPLICATION ORIENTED
CHARACTERIZATION
s FOR THROUGH-HOLE VERSION
CONTACT SALES OFFICE
ID
40 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size™ " strip-based process. The resulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalanche charac-
teristics and less critical alignment steps therefore
a remarkable manufacturing reproducibility.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(Suffix "T4")
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
IDM(•)
Ptot
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 ^oC
Drain Current (continuous) at Tc = 100 ^oC
Drain Current (pulsed)
Total Dissipation at Tc = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
July 1998
Value
Unit
30
V
30
V
± 20
V
40
A
28
A
160
A
80
0.53
W
W/^oC
7
V/ns
-65 to 175
o_C
175
o_C
(1) ISD ≤ 40 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
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