STB28N60M2 Datasheet, PDF (3/21 Pages) STMicroelectronics – Extremely low gate charge

STB28N60M2, STI28N60M2, STP28N60M2,
STW28N60M2
Electrical ratings
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
Value
Unit
VGS
ID
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
±25
22
14
88
170
15
50
-55 to 150
V
A
A
A
W
V/ns
V/ns
°C
Notes:
(1)_{Pulse width limited by safe operating area.}
(2)_{ISD ≤ 22 A, di/dt ≤ 400 A/µs; VDS(peak) < V(BR)DSS, VDD = 400 V.}
(3)_{VDS ≤ 480 V}
Table 3: Thermal data
Symbol
Parameter
Value
Unit
D²PAK I²PAK TO-220 TO-247
Rthj-case
Rthj-pcb
Rthj-amb
Thermal resistance junction-case max
Thermal resistance junction-pcb max⁽¹⁾
Thermal resistance junction-ambient max
0.74
30
62.5
62.5
°C/W
°C/W
50 °C/W
Notes:
(1)_{When mounted on 1 inch² FR-4, 2 Oz copper board.}
Symbol
Table 4: Avalanche characteristics
Parameter
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax)
EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR; VDD = 50 V)
Value Unit
3.6 A
350 mJ
DocID025254 Rev 4
3/21