STB28N60M2 Datasheet, PDF (1/21 Pages) STMicroelectronics – Extremely low gate charge

STB28N60M2, STI28N60M2,
STP28N60M2, STW28N60M2
N-channel 600 V, 0.135 Ω typ., 22 A MDmesh™ M2
Power MOSFETs in D²PAK, I²PAK, TO-220 and TO-247
Datasheet - production data
Features
Order code
STB28N60M2
STI28N60M2
STP28N60M2
STW28N60M2
VDS @ TJmax
650 V
RDS(on) max.
0.150 Ω
ID
22 A
Figure 1: Internal schematic diagram
D (2 TAB )
 Extremely low gate charge
 Excellent output capacitance (COSS) profile
 100% avalanche tested
 Zener-protected
Applications
 Switching applications
 LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
G(1)
developed using MDmesh™ M2 technology.
Thanks to their strip layout and improved vertical
structure, these devices exhibit low on-resistance
and optimized switching characteristics,
rendering them suitable for the most demanding
high efficiency converters.
S(3)
AM15572V1
Order code
STB28N60M2
STI28N60M2
STP28N60M2
STW28N60M2
Table 1: Device summary
Marking
Package
D²PAK
28N60M2
I²PAK
TO-220
TO-247
Packing
Tape and reel
Tube
March 2017
DocID025254 Rev 4
This is information on a product in full production.
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