STB24NF10 Datasheet, PDF (3/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

STB24NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
t_r
P ar am et e r
Turn-on Delay Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gat e-Drain Charge
Test Conditions
VDD = 50 V
ID = 12 A
R_G = 4.7 Ω
V_GS = 10 V
(Resistive Load, see fig. 3)
V_DD = 80 V I_D = 24 A V_GS = 10 V
Min.
Typ.
58
45
Max.
Unit
ns
ns
30
nC
6
nC
10
nC
SWITCHING OFF
Symbo l
t_d(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
t_d(off)
t_f
t_c
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
V_DD = 27 V
I_D = 12 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
Vclamp = 80 V
I_D = 24 A
R_G = 4.7 Ω
V_GS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
49
17
43
36
39
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
V_SD (∗) Forward On Voltage
I_SD = 24 A V_GS = 0
t_rr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
I_SD = 24 A
V_DD = 50 V
di/dt = 100 A/µs
T_j = 150 ^oC
(see test circuit, fig. 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operatingarea
Min.
Typ.
100
375
7.5
Max.
24
96
1.5
Unit
A
A
V
ns
nC
A
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