STB24NF10 Datasheet, PDF (1/6 Pages) STMicroelectronics – N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

®
STB24NF10
N - CHANNEL 100V - 0.07Ω - 24A TO-263
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS(on )}
I_D
STB24NF10
100 V < 0.077 Ω
24 A
s TYPICAL RDS(on) = 0.07 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
DESCRIPTION
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applications with low gate drive requirements.
PRELIMINARY DATA
3
1
D²PAK
TO-263
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS
V_DGR
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
VG S
I_D
I_D
I_DM(•)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1 ) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_stg Storage Temperature
T_j Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
( 2) starting Tj = 25 ^oC, ID =24A , VDD = 50V
April 2000
Va l u e
Unit
100
V
100
V
± 20
V
24
A
15
A
96
A
80
0.53
W
W /^o C
9
V/ns
75
mJ
-65 to 175
o_C
175
o_C
(1) ISD ≤ 24 A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMA
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