STB23NM50N Datasheet, PDF (3/21 Pages) STMicroelectronics – N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET

STB23NM50N, STF23NM50N, STP23NM50N, STW23NM50N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, D²PAK TO-247 TO-220FP
V_DS Drain-source voltage (V_GS = 0)
V_GS Gate- source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
V_ISO
dv/dt ⁽³⁾
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;T_C=25 °C)
Peak diode recovery voltage slope
500
± 25
17
11
68
125
15
T_stg Storage temperature
T_j Max. operating junction temperature
-55 to 150
150
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 17 A, di/dt ≤ 400 A/µs, V_DS peak ≤ V_(BR)DSS, V_DD = 80% V_(BR)DSS
V
V
17 ⁽¹⁾
A
11 ⁽¹⁾
A
68 ⁽¹⁾
A
30
W
2500
V
V/ns
°C
°C
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
max
R_thj-pcb ⁽¹⁾
Thermal resistance junction-pcb
minimum footprint
R_thj-amb
Thermal resistance junction-
ambient max
T_l
Maximum lead temperature for
soldering purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
D²PAK
Value
Unit
TO-247 TO-220 TO-220FP
1
4.17 °C/W
30
°C/W
62.5
50
62.5 °C/W
300
°C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_{AR (pulse width limited by Tj Max)}
Single pulse avalanche energy
E_AS
(starting Tj = 25 °C, I_D = I_AR, V_DD = 50 V)
Doc ID 16913 Rev 4
Value
6
254
Unit
A
mJ
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