STB23NM50N Datasheet, PDF (1/21 Pages) STMicroelectronics – N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK MDmesh™ II Power MOSFET

STB23NM50N, STF23NM50N
STP23NM50N, STW23NM50N
N-channel 500 V, 0.162 Ω, 17 A TO-220, TO-220FP, TO-247, D²PAK
MDmesh™ II Power MOSFET
Features
Order codes
STB23NM50N
STF23NM50N
STP23NM50N
STW23NM50N
V_DSS
(@Tjmax)
550 V
R_DS(on)
max.
< 0.19 Ω
I_D
17 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
TO-247
3
1
D²PAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB23NM50N
STF23NM50N
STP23NM50N
STW23NM50N
Marking
23NM50N
Package
D²PAK
TO-220FP
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
May 2011
Doc ID 16913 Rev 4
1/21
www.st.com
21