STB21NM50N Datasheet, PDF (3/16 Pages) STMicroelectronics – N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
ELECTRICAL CHARACTERISTICS (T_CASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Value
Min.
Typ. Max.
V_(BR)DSS Drain-source
I_D = 1mA, V_GS = 0
500
Breakdown Voltage
dv/dt(2) Drain Source Voltage Vdd=400V, Id=25A, Vgs=10V
44
Slope
I_DSS
Zero Gate Voltage
V_DS = Max Rating
1
Drain Current (V_GS = 0) V_DS = Max Rating
10
T_C = 125 °C
I_GSS
Gate-body Leakage
V_GS = ± 20V
100
Current (V_DS = 0)
V_GS(th) Gate Threshold Voltage V_DS = V_GS, I_D = 250 µA
2
3
4
R_DS(on)
Static Drain-source On V_GS = 10V, I_D = 9 A
Resistance
0.150 0.190
(2) Characteristic value at turn off on inductive load
Unit
V
V/ns
µA
µA
nA
V
Ω
Table 7: Dynamic
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_fs (1) Forward Transconductance V_DS = 15 V_, I_D = 9 A
12
S
C_iss
Input Capacitance
V_DS = 25V, f = 1 MHz, V_GS = 0
1950
pF
C_oss
Output Capacitance
420
pF
C_rss
Reverse Transfer
60
pF
Capacitance
C_{oss eq.} (*) Equivalent Output
Capacitance
V_GS = 0V, V_DS = 0V to 400V
270
pF
t_d(on)
t_r
t_d(off)
t_f
Turn-on Delay Time
Rise Time
Off-voltageRise Time
Fall Time
V_DD =250 V, I_D = 9 A
R_G = 4.7Ω V_GS = 10 V
(see Figure 18)
22
ns
18
ns
90
ns
30
ns
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 400V, I_D = 18 A,
V_GS = 10V,
(see Figure 21)
65
nC
10
nC
30
nC
R_g
Gate Input Resistance
f=1MHz Gate DC Bias=0
Test Signal Level=20mV
Open Drain
1.6
Ω
(*) C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0 to 80% V_DSS
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
I_SDM
Source-drain Current
Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 18 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 18 A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 25°C
(see Figure 19)
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 18A, di/dt = 100 A/µs
V_DD = 100 V, T_j = 150°C
(see Figure 19)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
360
5
27
640
6.5
27
Max. Unit
18
A
72
A
1.5
V
ns
µC
A
ns
µC
A
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