STB21NM50N Datasheet, PDF (2/16 Pages) STMicroelectronics – N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET

STP21NM50N - STF21NM50N - STB21NM50N - STB21NM50N-1 - STW21NM50N
Table 3: Absolute Maximum ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Viso
Insulation Winthstand Voltage (DC)
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
(1) ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDD =80% V(BR)DSS
Value
TO-220 / D²PAK / I²PAK
/ TO-247
500
500
±25
18
11
72
140
1.12
15
--
–55 to 150
150
TO-220FP
18 (*)
11 (*)
72 (*)
30
0.23
2500
Table 4: Thermal Data
TO-220 / D²PAK / I²PAK
/ TO-247
Rthj-case Thermal Resistance Junction-case Max
0.89
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
T_l
Maximum Lead Temperature For Soldering
Purpose
300
TO-220FP
4.21
Table 5: Avalanche Characteristics
Symbol
Parameter
I_AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max Value
9
480
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C/W
°C/W
°C
Unit
A
mJ
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