STB16PF06L Datasheet, PDF (3/10 Pages) STMicroelectronics – P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET

STB16PF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 6: Dynamic
Symbol
Parameter
g_fs
Forward Transconductance
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
t_d(on)
t_r
t_d(off)
t_f
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
Test Conditions
V_DS = 10 V_, I_D = 3 A
V_DS = 25V, f = 1 MHz, V_GS = 0
Min.
V_DD = 30 V, I_D = 8 A, R_G = 4.7Ω
V_GS = 4.5 V
(Resistive Load , Figure 1)
V_DD = 48 V, I_D = 16 A,
V_GS = 4.5V
(See test circuit, Figure 2)
Table 7: Source Drain Diode
Symbol
Parameter
Test Conditions
I_SD
I_SDM (2)
Source-drain Current
Source-drain Current (pulsed)
V_SD (1) Forward On Voltage
I_SD = 8 A, V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD = 16 A, di/dt = 100A/µs
V_DD = 20V, T_j = 150°C
(see test circuit, Figure 3)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Min.
Typ.
7.2
630
121
49
129
90
25.5
19.5
11.4
5.2
4.7
Typ.
48.5
87.3
3.6
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
15.5
nC
nC
nC
Max.
16
64
1.3
Unit
A
A
V
ns
nC
A
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