STB16PF06L Datasheet, PDF (2/10 Pages) STMicroelectronics – P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET

STB16PF06L
Table 3: Absolute Maximum ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate-source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
E_AS (2) Single Pulse Avalanche Energy
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤16A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting T_j = 25°C , I_D = 8 A , V_DD = 30 V
Note:For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reverse
Value
60
60
± 16
16
11.4
64
70
0.4
20
250
- 55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-PCB(#) Thermal Resistance Junction-PCB Max
T_l
Maximum Lead Temperature For Soldering
Purpose (1.6 mm frrom case, for 10sec)
(#) When Mounted on 1 inch² FR-4 board, 2 oz of Cu
2.14
°C/W
34
°C/W
300
°C
ELECTRICAL CHARACTERISTICS (T_CASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250µA, V_GS = 0
60
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 16V
±100 nA
V_GS(th) Gate Threshold Voltage
V_DS = V_GS, I_D = 100µA
1.5
V
R_DS(on)
Static Drain-source On
Resistance
V_GS = 10V, I_D = 8 A
V_GS = 5V, I_D = 8 A
0.11 0.125
Ω
0.130 0.165
Ω
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