STB150NF55 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-CHANNEL 55V - 0.005 ohm -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET

STB150NF55 STP150NF55 STW150NF55
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 27.5 V
I_D = 60 A
35
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
180
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD=27.5 V I_D=120A V_GS= 10V
140
170
nC
35
nC
70
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 27.5 V
I_D = 60 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
140
80
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 120 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 120 A di/dt = 100A/µs
V_DD = 25 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
130
350
7.5
Max.
120
480
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
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