STB150NF55 Datasheet, PDF (1/14 Pages) STMicroelectronics – N-CHANNEL 55V - 0.005 ohm -120A D²PAK/TO-220/TO-247 STripFET™ II POWER MOSFET

STB150NF55 STP150NF55
STW150NF55
N-CHANNEL 55V - 0.005 Ω -120A D²PAK/TO-220/TO-247
STripFET™ II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
V_DSS
R_DS(on)
I_D
STB150NF55
STP150NF55
STP150NF55
55 V
55 V
55 V
<0.006 Ω
<0.006 Ω
<0.006 Ω
120 A(**)
120 A(**)
120 A(**)
s TYPICAL R_DS(on) = 0.005 Ω
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s AUTOMOTIVE
3
1
D²PAK
TO-263
(Suffix “T4”)
TO-247
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB150NF55T4
STP150NF55
STW150NF55
MARKING
B150NF55
P150NF55
W150NF55
PACKAGE
D²PAK
TO-220
TO-247
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D(**)
I_D
I_DM(•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
Gate- source Voltage
Drain Current (continuous) at T_C = 25°C
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
October 2002
Value
55
55
± 20
120
106
480
300
2.0
8
850
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤120A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 60 A, V_DD = 30V
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