STB130NH02L Datasheet, PDF (3/13 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION

STB130NH02L STP130NH02L
ELECTRICAL CHARACTERISTICS (continued)
Table 8: SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 10 V
I_D = 45 A
14
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
224
ns
(Resistive Load, Figure )
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD=10 V I_D=90 A V_GS=10 V
69
93
nC
13
nC
9
nC
Q_oss(6) Output Charge
V_DS= 16 V
V_GS= 0 V
27
nC
Q_gls(7) Third-quadrant Gate Charge V_DS< 0 V
V_GS= 10 V
64
nC
Table 9: SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
Min. Typ. Max. Unit
V_DD = 10 V
I_D = 45 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
69
ns
40
54
ns
Table 10: SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
I_SD
I_SDM
Source-drain Current
Source-drain Current (pulsed)
90
A
360
A
V_SD ⁽⁵⁾ Forward On Voltage
I_SD = 45 A
V_GS = 0
1.3
V
t_rr
Reverse Recovery Time
I_SD = 90 A di/dt = 100A/µs
47
ns
Q_rr
Reverse Recovery Charge
V_DD = 15 V
T_j = 150°C
58
nC
I_RRM
Reverse Recovery Current (see test circuit, Figure 5)
2.5
A
(1) _{Garanted when external Rg=4.7 Ω and tf < tfmax.}
(²) Value limited by wire bonding
(3) _{Pulse width limited by safe operating area.}
(⁴) Starting T_j = 25 ^oC, I_D = 45A, V_DD = 10V .
(5) _{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(6) _{Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See Appendix A}
(7) _{Gate charge for synchronous operation}
Figure 3: Safe Operating Area
Figure 4: Thermal Impedance
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