STB130NH02L Datasheet, PDF (1/13 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION

STB130NH02L
STP130NH02L
N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220
STripFET™ III POWER MOSFET FOR DC-DC CONVERSION
Table 1: General Features
TYPE
V_DSS
R_DS(on)
I_D
STB130NH02L
STP130NH02L
24 V
24 V
< 0.0044 Ω 90 A⁽²⁾
< 0.0044 Ω 90 A⁽²⁾
■ TYPICAL R_DS(on) = 0.0034 Ω @ 10 V
■ TYPICAL R_DS(on) = 0.005 Ω @ 5 V
■ R_DS(ON) * Qg INDUSTRY’s BENCHMARK
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DEVICE
■ SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
Figure 1:Package
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
The STB_P130NH02L utilizes the latest advanced
design rules of ST’s proprietary STripFET™ technology.
It is ideal in high performance DC-DC converter
applications where efficiency is to be achieved at very
high output currents.
APPLICATIONS
■ SYNCHRONOUS RECTIFICATIONS FOR
TELECOM AND COMPUTER
■ OR-ING DIODE
Figure 2: Internal Schematic Diagram
Table 2: Ordering Information
SALES TYPE
STB130NH02LT4
STP130NH02L
MARKING
B130NH02L
P130NH02L
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_spike(1)
V_DS
V_DGR
Drain-source Voltage Rating
Drain-source Voltage (V_GS = 0)
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(2)
Drain Current (continuous) at T_C = 25°C
I_D(2)
I_DM(3)
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽⁴⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
April 2005
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
Value
30
24
24
± 20
90
90
360
150
1
900
-55 to 175
Rev. 2.0
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
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