STB130N6F7 Datasheet, PDF (3/14 Pages) STMicroelectronics – Low Crss/Ciss ratio for EMI immunity

STB130N6F7
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VDS
VGS
ID⁽¹⁾
IDM⁽²⁾
PTOT
EAS⁽³⁾
Tstg
Tj
Drain-source voltage
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Single pulse avalanche energy
Storage temperature
Operating junction temperature
Notes:
(1) _{Current is limited by package.}
(2) _{Pulse width is limited by safe operating area.}
(3) _{starting Tj = 25 °C, ID = 20 A, VDD = 40 V.}
Symbol
Rthj-case
Rthj-amb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Notes:
(1) _{When mounted on a 1-inch² FR-4, 2 Oz copper board.}
Electrical ratings
Value
Unit
60
V
±20
V
80
A
80
320
A
160
W
200
mJ
-55 to 175
°C
Value
0.94
35
Unit
°C/W
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