STB130N6F7 Datasheet, PDF (1/14 Pages) STMicroelectronics – Low Crss/Ciss ratio for EMI immunity

STB130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STB130N6F7
VDS
60 V
RDS(on) max.
5.0 mΩ
ID
80 A
PTOT
160 W
 Among the lowest RDS(on) on the market
 Excellent figure of merit (FoM)
 Low Crss/Ciss ratio for EMI immunity
 High avalanche ruggedness
Applications
 Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(3)
Order code
STB130N6F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
130N6F7
D²PAK
Packing
Tape and reel
December 2015
DocID027380 Rev 5
This is information on a product in full production.
1/14
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