STB120NF10 Datasheet, PDF (3/10 Pages) STMicroelectronics – N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET

STB120NF10 STP120NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
t_d(on)
Turn-on Delay Time
V_DD = 50 V
I_D = 60 A
25
ns
t_r
Rise Time
R_G = 4.7 Ω
V_GS = 10 V
90
ns
(Resistive Load, Figure 3)
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD=80 V I_D=120 A V_GS=10 V
172
233
nC
32
nC
64
nC
SWITCHING OFF
Symbol
Parameter
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Conditions
V_DD = 50 V
I_D = 60 A
R_G = 4.7Ω,
V_GS = 10 V
(Resistive Load, Figure 3)
Min.
Typ.
132
68
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
I_SD
I_SDM ⁽•⁾
Source-drain Current
Source-drain Current (pulsed)
V_SD ^(*) Forward On Voltage
I_SD = 120 A
V_GS = 0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)_{Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.}
(_{•)Pulse width limited by safe operating area.}
I_SD = 120 A di/dt = 100A/µs
V_DD = 40 V
T_j = 150°C
(see test circuit, Figure 5)
Min.
Typ.
152
760
10
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10