STB120NF10 Datasheet, PDF (1/10 Pages) STMicroelectronics – N-CHANNEL 100V - 0.009 W - 120A D2PAK/TO-220 STripFET II POWER MOSFET

STB120NF10
STP120NF10
N-CHANNEL 100V - 0.009 Ω - 120A D²PAK/TO-220
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STB120NF10
STP120NF10
100 V
100 V
< 0.0105 Ω 120 A
< 0.0105 Ω 120 A
s TYPICAL R_DS(on) = 0.009 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize the on-resistance. It is therefore suitable as
primary switch in advanced high-efficiency, high-
frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any
applications with low gate drive requirements.
APPLICATIONS
s AUDIO AMPLIFIERS
s POWER TOOLS
3
1
D²PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB120NF10
STP120NF10
MARKING
B120NF10
P120NF10
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM(•) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS(2)
Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
May 2003
Value
100
100
± 20
120
85
480
312
2.08
10
550
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤120A, di/dt ≤300A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 60A, V_DD = 50V
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