STB10NB50 Datasheet, PDF (3/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK PowerMESH] MOSFET

STB10NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t_d(on)
t_r
Pa ram et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
V_DD = 250 V I_D = 5.3 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 3)
V_DD = 160 V I_D = 10 A V_GS = 10 V
Min.
T yp.
25
13
Max.
38
49
10
17
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 160 V I_D = 10 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
T yp.
13
15
25
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD =10.6 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD =10.6 A di/dt = 100 A/µs
V_DD = 50 V T_j = 150 ^oC
(see test circuit, figure 5)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
10.6
42.4
Unit
A
A
1.6
V
560
ns
4.9
nC
17.5
A
Safe Operating Area
Thermal Impedance
3/8