PD55035 Datasheet, PDF (3/14 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

TYPICAL PERFORMANCE (PD55035S)
Capacitance vs.Supply Voltage
1000
C is s
100
Coss
10
f = 1 MHz
Crss
1
0
4
8
12
16
20
24
28
Vdd (V)
Gate-Source Voltage vs. Case Temperature
1.02
ID = 6 A
1.01
ID = 5 A
1
ID = 4 A
0.99
ID = 3 A
0.98
0.97
ID = 2 A
-25
0
25
50
75
100
Tc (°C)
Power Gain vs. Output Power
24
22
20
520 MHz
18
480, 500 MHz
16
14
12
10
0
Vdd = 12.5 V
Idq = 200 m A
10
20
30
40
50
P out (W )
PD55035 - PD55035S
Drain Current vs. Gate-Surce Voltage
8
Vds = 10 V
7
6
5
4
3
2
1
0
1
2
3
4
5
6
Vgs (V)
Output Power vs. Input Power
45
40
35
30
25
5 20 MHz
20
48 0, 500 MHz
15
10
5
0
0
0.25
0 .5
0.75
Pin (W)
Vdd=12.5 V
Id q = 20 0 mA
1
1 .2 5
1 .5
Efficiency vs. Output Power
70
60
480 MHz
520 MHz
500 MHz
50
40
30
20
10
0
Vdd = 12.5 V
Idq = 200 m A
10
20
30
40
50
Pout (W )
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