PD55035 Datasheet, PDF (1/14 Pages) STMicroelectronics – RF POWER TRANSISTORS The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL
MOSFETs
PD55035
PD55035S
RF POWER TRANSISTORS
The LdmoST Plastic FAMILY
• EXCELLENT THERMAL STABILITY
• COMMON SOURCE CONFIGURATION
• P_OUT = 35 W with 16.9 dB gain @ 500 MHz /
12.5 V
• NEW RF PLASTIC PACKAGE
DESCRIPTION
The PD55035 is a common source N-Channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 12 V in common source mode at frequencies of
up to 1 GHz. PD55035 boasts the excellent gain,
linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. PD55035’s
superior linearity performance makes it an ideal
solution for car mobile radio.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 ^°C)
Symbol
Parameter
V_(BR)DSS Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current
P_DISS Power Dissipation (@ Tc = 70°C)
Tj
Max. Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance
March, 21 2003
PowerSO-10RF
(formed lead)
ORDER CODE
PD55035
BRANDING
PD55035
PowerSO-10RF
(straight lead)
ORDER CODE
PD55035S
BRANDING
PD55035S
Value
40
± 20
7
95
165
-65 to +150
1.0
Unit
V
V
A
W
°C
°C
°C/W
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