IRFP460 Datasheet, PDF (3/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

IRFP460
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
t_d(on)
t_r
Pa ram et e r
Turn-on Time
Rise Time
Q_g
Total Gate Charge
Q _gs Gat e-Source Charge
Q_gd Gate-Drain Charge
Test Conditions
V_DD = 250 V I_D = 10 A
R_G = 4.7 Ω
V_GS = 10 V
(see test circuit, figure 1)
V_DD = 400 V I_D = 20 A V_GS = 10 V
Min.
T yp.
32
15
Max.
Unit
ns
ns
100 130 nC
21
nC
37
nC
SWITCHING OFF
Symbo l
t_{r (Voff)}
t_f
t_c
Pa ram et e r
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V_DD = 400 V I_D = 20 A
R_G = 4.7 Ω V_GS = 10 V
(see test circuit, figure 5)
Min.
T yp.
20
25
47
Max.
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
I_SD
I_SDM (•)
Source-drain Current
Source-drain Current
(pulsed)
V_SD (∗) Forward On Voltage
I_SD = 20 A V_GS = 0
t_rr
Reverse Recovery
Time
Q_rr
Reverse Recovery
Charge
I_SD = 20 A di/dt = 100 A/µs
V_DD = 100 V T_j = 150 ^oC
(see test circuit, figure 3)
I _{R RM}
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
T yp.
Max.
20
80
Unit
A
A
1.6
V
700
ns
9
µC
25
A
Safe Operating Area
Thermal Impedance
3/8