IRFP460 Datasheet, PDF (1/8 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

®
IRFP460
N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
IRFP460
500 V < 0.27 Ω 20 A
s TYPICAL RDS(on) = 0.22 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY™ process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
s HIGH CURRENT SWITCHING
s UNINTERRUPTIBLE POWER SUPPLY (UPS)
s DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
3
2
1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
V_GS
I_D
I_D
Drain- gate Voltage (R_GS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
I_DM (•) Drain Current (pulsed)
P_tot Total Dissipation at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value
500
500
± 20
20
13
80
250
2
3.5
-65 to 150
150
( 1) ISD ≤20 Α, di/dt ≤ 160 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it
V
V
V
A
A
A
W
W /^o C
V/ns
o_C
o_C
September 1998
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