ESDAXXXP6 Datasheet, PDF (3/8 Pages) STMicroelectronics – Transil™ array for ESD protection

ESDAxxxP6
Characteristics
Figure 4. Peak power dissipation versus
initial junction temperature
PPP[Tj initial] / PPP[Tj initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Tj initial (°C)
0.0
0
25
50
75
100
125
150
175
Figure 5.
PPP(W)
1000
Peak pulse power versus
exponential pulse duration
(T_j initial = 25° C)
Tj initial = 25°C
ESDA6V1P6 & ESDA6V1-5P6
100
ESDA14V2BP6
tp(µs)
10
1
10
100
Figure 6.
IPP(A)
100.0
Clamping voltage versus peak
pulse current (T_j initial = 25° C,
rectangular waveform, t_p = 2.5 µs)
10.0
ESDA6V1P6 & ESDA6V1-5P6
ESDA14V2BP6
1.0
0.1
0
VCL(V)
t_P=2.5µs
T_j initial =25°C
10
20
30
40
50
60
70
Figure 7.
Junction capacitance versus
reverse applied voltage (typical
values)
C(pF)
80
70
60
50
ESDA6V1P6 & ESDA6V1-5P6
F=1MHz
VOSC=30mVRMS
Tj=25°C
40
30
20
ESDA14V2BP6
10
VR(V)
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
Figure 8.
Relative variation of leakage
current versus junction
temperature (typical values)
IR[Tj] / IR[Tj=25°C]
1.E+04
1.E+03
ESDA14V2BP6
V_R =12V
1.E+02
1.E+01
1.E+00
25
Tj(°C)
ESDA6V1P6 & ESDA6V1-5P6
V_R =3V
50
75
100
125
150
Figure 9.
Peak forward voltage drop versus
peak forward current (typical
values)
IFM(A)
1.E+00
ESDA6V1P6 & ESDA6V1-5P6
1.E-01
1.E-02
T_j =125°C
T_j =25°C
1.E-03
VFM(V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
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