ESDAXLC4-1BF3 Datasheet, PDF (3/10 Pages) STMicroelectronics – Single line extra low capacitance TVS

ESDAXLC4-1BF3
Characteristics
Figure 3.
C(pF)
1200
1000
800
Junction capacitance versus
reverse applied voltage
(typical values)
F=1 Mhz
V_osc = 30 mV_RMS
V_r = 0V
T_j = 25 °C
Figure 4. Junction capacitance versus
frequencies (typical values)
C(pF)
400
300
F = 20 MHz –3 GHz
V_osc = 30 mV_RMS
V_r = 0 V
T_j = 25 °C
600
200
400
100
200
0
V_R(V)
0
F(MHz)
0
1
2
3
4
5
0
500
1000
1500
2000
2500
3000
Figure 5.
S₂₁ attenuation measurement result Figure 6.
Variation of leakage current versus
junction temperature
(typical values)
100 ^IR(nA)
V_R = V_RM = 3 V
1
Figure 7. ESD response to IEC61000-4-2
(+8 kV contact discharge)
50 V/div
0
T_j(°C)
25
50
75
100
125
150
Figure 8. ESD response to IEC61000-4-2
(-8 kV contact discharge)
50 V/div
C2
C2
20 ns/div
20 ns/div
Doc ID 018522 Rev 2
3/10