ESDAVLC6V1-1BM2 Datasheet, PDF (3/13 Pages) STMicroelectronics – Single line low capacitance Transil for ESD protection

ESDAVLC6V1-1BM2, ESDAVLC6V1-1BT2
Characteristics
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
PPP[Tj initial] / PPP[Tj initial=25°C)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
Tj(°C)
25
50
75
100
125
150
Figure 3. Peak pulse power versus
exponential pulse duration
PPP(W)
1000
T_j initial = 25 °C
100
10
1
tp(µs)
10
100
Figure 4. Clamping voltage versus peak
pulse current (typical values)
IPP(A)
10.0
8/20 µs
T_j initial =25 °C
1.0
0.1
5
VCL(V)
10
15
Figure 5.
Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
8
7
6
5
4
3
2
1
0
0
1
F=1MHz
VOSC=30mVRMS
Tj=25°C
VR(V)
2
3
4
5
6
Figure 6.
Relative variation of leakage
current versus junction
temperature (typical values)
IR[Tj] / IR[Tj=25°C]
10
V_R =3V
Tj(°C)
1
25
50
75
100
125
Figure 7. S21 attenuation measurement
result
S₂₁ (dB)
0.00
- 5.00
- 10.00
15.00
- 20.00
- 25.00
- 30.00
F (Hz)
1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G
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